In-situ electrical resistance measurement of the selenization process in the CuInGa–Se system

In this work the selenization reactions and reaction paths in CuInxGa1-xSe2 thin films prepared by sputtering and post-selenization process are investigated. The in-situ electrical resistance measurement technique is applied to monitor all the selenization reactions. The crystal structure is determined by X-ray diffraction (XRD) measurement. From the analysis of resistance-temperature curves and the XRD patterns, the phase evolutions of various crystalline and selenization reaction paths have been obtained. From these measurements, the reaction mechanisms and kinetics in the CuInGa–Se system are further understood.