کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669150 | 1008879 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influences of substrate temperature on ambipolar organic heterojunction transistors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The influences of substrate temperature on ambipolar organic heterojunction transistors The influences of substrate temperature on ambipolar organic heterojunction transistors](/preview/png/1669150.png)
چکیده انگلیسی
Organic heterojunction thin-film transistors are fabricated based on copper phthalocyanine (CuPc) and hexadecafluorophtholocyaninatocopper (F16CuPc) as double active layers, which exhibit typical ambipolar conduction. Several substrate temperatures are utilized to tune film morphology, which results in a remarkable change on the electric characteristics of organic transistors. The highest balanced mobility value of 2.91 × 10−2 cm2/V s for hole and 1.04 × 10−2 cm2/V s for electron are obtained by depositing F16CuPc at 150 °C and CuPc at 200 °C, respectively, which are comparable to those conventional single-layer devices. This result demonstrates that the growth conditions of organic heterojunctions play a crucial role in ambipolar devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 1, 29 October 2010, Pages 439–442
Journal: Thin Solid Films - Volume 519, Issue 1, 29 October 2010, Pages 439–442
نویسندگان
Wen Gu, Xifeng Li, Hao Zhang, Bin Wei, Jianhua Zhang, Jun Wang,