کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669156 | 1008879 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Terahertz Schottky barrier diodes with various isolation designs for advanced radio frequency applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High performance nanometer NiSi2-Si Schottky barrier diode arrays (SBDA) with various isolation designs, including poly Si gate (PSG) and resist protection oxide (RPO), are developed for advanced radio frequency applications. Radio frequency performances of these developed SBDAs are investigated and compared to that with the conventional shallow trench isolation. All of the SBDAs are fabricated with a foundry state-of-the -art 45 nm complementary metal oxide semiconductor technology. Both of PSG and RPO insulated SBDAs have higher cutoff frequency and a simpler preparation process. Specifically, the PSG insulted SBDA could achieve a cutoff frequency of up to 4.6 THz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 1, 29 October 2010, Pages 471–474
Journal: Thin Solid Films - Volume 519, Issue 1, 29 October 2010, Pages 471–474
نویسندگان
S.-M. Chen, Y.-K. Fang, F.R. Juang, W.-K. Yeh, C.-P. Chao, H.-C. Tseng,