کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669156 1008879 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Terahertz Schottky barrier diodes with various isolation designs for advanced radio frequency applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Terahertz Schottky barrier diodes with various isolation designs for advanced radio frequency applications
چکیده انگلیسی

High performance nanometer NiSi2-Si Schottky barrier diode arrays (SBDA) with various isolation designs, including poly Si gate (PSG) and resist protection oxide (RPO), are developed for advanced radio frequency applications. Radio frequency performances of these developed SBDAs are investigated and compared to that with the conventional shallow trench isolation. All of the SBDAs are fabricated with a foundry state-of-the -art 45 nm complementary metal oxide semiconductor technology. Both of PSG and RPO insulated SBDAs have higher cutoff frequency and a simpler preparation process. Specifically, the PSG insulted SBDA could achieve a cutoff frequency of up to 4.6 THz.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 1, 29 October 2010, Pages 471–474
نویسندگان
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