کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669225 | 1008881 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of higher performance indium tin oxide films at a very low temperature (< 80 °C) by the neutral beam-assisted sputtering process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Development of higher performance indium tin oxide films at a very low temperature (< 80 °C) by the neutral beam-assisted sputtering process Development of higher performance indium tin oxide films at a very low temperature (< 80 °C) by the neutral beam-assisted sputtering process](/preview/png/1669225.png)
چکیده انگلیسی
At very low temperatures (< 80 °C), improved performance indium tin oxide (ITO) thin films with a low resistivity of 4.22 Ã 10â4 Ωcm and high transmittance > 90% at 550 nm were developed using the neutral beam-assisted sputtering (NBAS) technique, which included a cyclic inter-treatment process with an Ar neutral beam. Transmission electron microscopy and electron diffraction showed that the neutral particles with hyper-thermal energy was able to enhance the formation of the nano-crystalline phase and activate the dopant without additional heating or plasma damage during ITO thin film deposition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 7, 31 January 2011, Pages 2098-2102
Journal: Thin Solid Films - Volume 519, Issue 7, 31 January 2011, Pages 2098-2102
نویسندگان
Jin Nyoung Jang, You Jong Lee, Jun Young Lee, Yun Sung Jang, MunPyo Hong, Kyoung Suk Oh, Suk Jae Yoo, Daechul Kim, Bonju Lee, Won-Gun Jang,