کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669259 1008881 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films
چکیده انگلیسی

The electrical properties of undoped SnO2 thin films prepared by the sol–gel technique were investigated by conductivity measurements in a temperature range of 50–200 K. Structural characterizations of the films were performed by atomic force microscopy and X-ray diffraction. Optical properties of the samples were also characterized by optical absorption spectroscopy. The different hopping models were used to investigate the characteristics of electrical conduction by hopping in employed temperature range. It was shown that three types of behavior can be expected, nearest-neighbour hopping at high temperatures, the Mott variable-range hopping at low temperatures and Efros–Shklovskii variable-range hopping at lower temperatures. The criteria for the observation of these three regions were established and the transitional behavior of the conductivity was determined. The experimentally determined critical transition temperatures were at the orders of magnitudes with what could be expected based on hopping conduction calculations. Under these analyses, the compensation ratio of the films was determined.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 7, 31 January 2011, Pages 2302–2307
نویسندگان
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