کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669381 | 1008883 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Optical and electrical properties of ZnO films, codoped with Al and Ga deposited at room temperature by an RF sputtering method Optical and electrical properties of ZnO films, codoped with Al and Ga deposited at room temperature by an RF sputtering method](/preview/png/1669381.png)
ZnO thin films, codoped with Al and Ga, were prepared on fused quartz (FQ) and cyclo-olefin polymer (COP) substrates using a radial frequency magnetron sputtering technique at room temperature, without the introducing of oxygen. The elemental distributions of Al, Ga, Zn and O throughout the films were found and no compositional variation in working pressure was observed. A resistivity of 0.03–4.07 Ω cm in AGZ/FQ films (Fig. 2b and 0.04–5.73 Ω cm in AGZ/COP films as well as a transmittance of above 85% were obtained by appropriate control of the working pressure. Compared with the band gap energy of single crystal ZnO, the band gap energy of the AGZ/FQ thin film was somewhat higher. The band gap energy of the AGZ/FQ films showed a tendency to increase with the working pressure employed.
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6179–6183