کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669391 1008883 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Surface properties of etched ITO thin films using high density plasma
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Surface properties of etched ITO thin films using high density plasma
چکیده انگلیسی

The etching characteristics of ITO in a BCl3/Ar plasma, including the etch rate and selectivity of ITO, were investigated. The maximum etch rate of 62.8 nm/min for the ITO thin films was obtained at a BCl3/Ar gas mixing ratio of 25%/75%. Ion bombardment by physical sputtering was required to obtain such high etch rates, due to the relatively low volatility of the by-products formed during the etching. The chemical reactions on the etched surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and the preferential losses on the etched surfaces were investigated using Atomic Force Microscopy (AFM).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6228–6231
نویسندگان
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