کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669392 | 1008883 | 2010 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes](/preview/png/1669392.png)
We investigated the effect of the deposition rate of Au source/drain electrodes on the contact resistance of the top-contact organic thin-film transistors (OTFTs). For the formation of source/drain contacts, Au was thermally deposited at the different rates of 0.5, 1.0, 5.0, and 13.0 Å/s. With increasing the Au deposition rate, the contact resistance extracted at the gate voltage of − 30 V could be reduced from 14 × 106 to 2.4 × 106 Ω, resulting in the characteristic improvements of the top-contact OTFT. It is also found that the contact resistance significantly affects the off-state currents of the device having the short channel length of 10 μm. The control of the deposition rate of source/drain electrodes is suggested to optimize the contact properties of the top-contact OTFTs as well as the device performance.
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6232–6235