کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669417 | 1008883 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of thermal annealing on Ni/Au contact to a-InGaZnO films deposited by dc sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of thermal annealing on Ni/Au contact to a-InGaZnO films deposited by dc sputtering Effect of thermal annealing on Ni/Au contact to a-InGaZnO films deposited by dc sputtering](/preview/png/1669417.png)
چکیده انگلیسی
We deposited Ni (15 nm)/Au (30 nm) layers on a-InGaZnO in order to produce low-resistance ohmic contacts by using a dc sputtering method. The samples were annealed at various temperatures for 5 min in Ar ambient. The electrical and the structural properties of the Ni/Au contact to a-InGaZnO were investigated. According to the current-voltage measurements, both the as-deposited and low-temperature annealed samples showed an ohmic behavior. The specific contact resistance of the as-deposited sample was 4.1 Ã 10â 5 Ω cm2, which was the lowest value. Further increasing the temperature above 400 °C led to an increase in the specific contact resistance. This is due to the chemical intermixing and formation of the oxide in the contact interface caused by the post-growth thermal annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6348-6351
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6348-6351
نویسندگان
Hyunghoon Kim, Jin Yong Moon, Young-Woo Heo, Ho Seong Lee,