کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669419 | 1008883 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An investigation of contact resistance between metal electrodes and amorphous gallium–indium–zinc oxide (a-GIZO) thin-film transistors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: An investigation of contact resistance between metal electrodes and amorphous gallium–indium–zinc oxide (a-GIZO) thin-film transistors An investigation of contact resistance between metal electrodes and amorphous gallium–indium–zinc oxide (a-GIZO) thin-film transistors](/preview/png/1669419.png)
چکیده انگلیسی
This paper reports our investigation of different source/drain (S/D) electrode materials in thin-film transistors (TFTs) based on an indium–gallium–zinc oxide (IGZO) semiconductor. Transfer length, contact resistance, channel conductance, and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with intrinsic field-effect mobility (μFE-i) of 10.0 cm2/Vs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6357–6360
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6357–6360
نویسندگان
Woong-Sun Kim, Yeon-Keon Moon, Kyung-Taek Kim, Je-Hun Lee, Byung-du Ahn, Jong-Wan Park,