Characterization of sprayed CuInS2 films by XRD and Raman spectroscopy measurements

We studied CuInS2 (CIS) film growth using two deposition methods, which were high electrostatic field assisted ultrasonic spray (HEFAUS) deposition and sulfurization of Cu–In metallic film. The sprayed-films were grown with chalcopyrite ordering and Cu–Au ordering mixed. In order to obtain higher quality CIS films, post-sulfurization was carried out for sprayed-films. The post-sulfurization induced improvement of crystallinity and enhancement of chalcopyrite ordering. However, it was observed that Cu–Au ordering still coexisted in the CIS film after post-sulfurization. With the same sulfurization condition, sulfurization was done to transform Cu–In metallic film into CIS film. The sulfurized metallic film was turned out to be formed as CIS film with higher crystallinity and better chalcopyrite ordering than sulfurized sprayed-films. All fabricated films were characterized by X-ray diffraction, Raman scattering, scanning electron microscope and energy dispersive X-ray analysis measurements.