کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669530 1008884 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Vapor–solid–solid Si nano-whiskers growth using pure hydrogen as the source gas
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Vapor–solid–solid Si nano-whiskers growth using pure hydrogen as the source gas
چکیده انگلیسی

This paper describes the growth mechanism and structure of Si whiskers grown on a Si substrate in a tungsten hot filament chemical vapor deposition reactor with pure hydrogen as source gas using a two step process. In the first step, atomic hydrogen etched the silicon surface, forming silicon hydrides that react with tungsten from the filament. The resulting silicide particles deposited on the silicon surface forming a mesh-like pattern. The particles work as an etching mask against hydrogen radical etching of the silicon surface and inverted-pyramids or V-groove-shaped surface texture were obtained. In the second step the filament current was reduced and whiskers grew onto the substrate due to the interaction of the silicon hydrides with the particles and subsequent precipitation of saturated Si. The whiskers were found to have tungsten silicide particles on their tip, suggesting the whisker growth was through the Vapor–Solid–Solid (VSS) mechanism. A balance between the hydrogen radical etching effect and the supply of silicon hydride from the etching reaction on the silicon surface is crucial for the growth of dense silicon whiskers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 14, 2 May 2011, Pages 4613–4616
نویسندگان
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