کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669556 | 1008885 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films](/preview/png/1669556.png)
چکیده انگلیسی
In this study, we investigated the characteristics of various lanthanum hafnium oxide (LHO) films with different lanthanum (La) concentrations deposited by an electron cyclotron resonance plasma-enhanced atomic layer deposition (ECR-ALD). Tris(isopropyl-cyclopentadienyl)lanthanum (La(iPrCp)3) and tetrakis(ethylmethylamino)hafnium (TEMAHf) were utilized as the La and hafnium (Hf) precursors, respectively. When the La/(La + Hf) atomic percent ratio was 49.1%, the growth rate of the LHO film was 0.5 Å/cycle, with a dielectric constant of 16.3. As the La concentration was increased, the dielectric constant decreased. In addition, we found that a La-hydrate phase (La–O–H) can be easily formed when the La/(La + Hf) is over about 50%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 3900–3903
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 3900–3903
نویسندگان
Woong-Sun Kim, Sang-Kyun Park, Dae-Yong Moon, Byoung-Woo Kang, Heon-Do Kim, Jong-Wan Park,