کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669556 | 1008885 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, we investigated the characteristics of various lanthanum hafnium oxide (LHO) films with different lanthanum (La) concentrations deposited by an electron cyclotron resonance plasma-enhanced atomic layer deposition (ECR-ALD). Tris(isopropyl-cyclopentadienyl)lanthanum (La(iPrCp)3) and tetrakis(ethylmethylamino)hafnium (TEMAHf) were utilized as the La and hafnium (Hf) precursors, respectively. When the La/(La + Hf) atomic percent ratio was 49.1%, the growth rate of the LHO film was 0.5 Å/cycle, with a dielectric constant of 16.3. As the La concentration was increased, the dielectric constant decreased. In addition, we found that a La-hydrate phase (La–O–H) can be easily formed when the La/(La + Hf) is over about 50%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 3900–3903
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 3900–3903
نویسندگان
Woong-Sun Kim, Sang-Kyun Park, Dae-Yong Moon, Byoung-Woo Kang, Heon-Do Kim, Jong-Wan Park,