کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669569 | 1008885 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm2°V− 1s− 1 and about 3 × 1018°cm− 3 at 600 °C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 3950–3953
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 3950–3953
نویسندگان
Jong Hyun Lee, Jun Seok Lee, Seung Nam Cha, Jong Min Kim, Do Seok Seo, Won Bin Im, Jin Pyo Hong,