کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669584 | 1008885 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (μsat) of about 0.22 cm2/Vs, the current on/off ratio is ~ 105, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage (Vth) is less than − 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 4011–4014
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 4011–4014
نویسندگان
Keun Woo Lee, Kon Yi Heo, Sang Hoon Oh, Abderrafia Moujoud, Gun Hee Kim, Hyun Jae Kim,