کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669620 | 1008885 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of surface treatments using PECVD-grown hexamethyldisiloxane on the performance of organic thin-film transistor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Hexamethyldisiloxane (HMDSO) was deposited on a gate dielectric surface by plasma enhanced chemical vapor deposition for surface treatment, and its effects on the microstructure of pentacene and the transistor characteristics were examined. HMDSO films were deposited at room temperature at various RF powers (10 W to 120 W). Atomic force microscopy analysis of the pentacene films showed a significant increase in the grain size of the samples treated under the optimum RF power (10 W), which in turn led to a significant improvement in the electrical mobility. These results show that PECVD-grown HMDSO can be used as an effective surface treatment and warrants further investigation for process optimization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 4161–4164
Journal: Thin Solid Films - Volume 517, Issue 14, 29 May 2009, Pages 4161–4164
نویسندگان
Mi Ran Moon, Eunkyoung Nam, Jihyung Woo, Sungwoo Lee, Kyung Park, Donggeun Jung, Hyoungsub Kim, Hoo-Jeong Lee,