Low-temperature formation of silicon dioxide films by oxygen cluster ion beam assisted deposition

Silicon dioxide films were formed by the cluster ion beam assisted deposition method. An oxygen cluster ion beam was irradiated while a silicon monoxide vapor was deposited on a substrate at room temperature. The deposited films were oxidized to form silicon dioxide films when the beam current density of the oxygen cluster ion beam was larger than 500 nA/cm2 and the acceleration voltage of the oxygen cluster ion beam was higher than 3 kV.