Effects of the O2 flow rate and post-deposition thermal annealing on the optical absorption spectra of Ga-doped ZnO films

The optical absorption spectra of polycrystalline Ga-doped ZnO (GZO) thin films deposited by ion plating with direct current arc discharge have been studied. The GZO films that were deficient in oxygen showed absorption in the visible wavelength range. The intensity of the absorption band decreased with increasing O2 flow rate during the deposition. Post-deposition thermal annealing in air and in a N2 gas atmosphere also decreased the intensity of the absorption band. The intensity of the absorption band showed a slight correlation with carrier concentrations in the GZO films. The absorption intensity decreased with the decrease of the carrier concentration and diminished at a carrier concentration of around 7 × 1020 cm− 3. The contribution of carriers from native donors to transport in GZO films is discussed.