کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669793 1008889 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stress and microstructure evolution during growth of magnetron-sputtered low-mobility metal films: Influence of the nucleation conditions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Stress and microstructure evolution during growth of magnetron-sputtered low-mobility metal films: Influence of the nucleation conditions
چکیده انگلیسی

Large tensile stresses (up to 3 GPa) were previously observed in low-mobility metallic Mo1 − xSix films grown on amorphous Si and they were ascribed to the densification strain at the amorphous-crystalline transition occurring at a critical film thickness. Here, we focus on the influence of the nucleation conditions on the subsequent stress build-up in sputter-deposited Mo0.84Si0.16 alloy films. For this purpose, growth was initiated on various underlayers, including amorphous layers and crystalline templates with different lattice mismatch, and the stress evolution was measured in situ during growth using the wafer curvature technique. Tensile stress evolutions were observed on amorphous SiO2 and (111) Ni underlayers, similarly to the stress behaviour found on amorphous Si. For these series, the films were characterized by large in-plane grain size (~ 500 nm). However, on a (110) Mo buffer layer, a different stress behaviour occurred: after an initial tensile rise ascribed to coherence stress, a reversal towards a compressive steady state stress was observed. A change in film microstructure was also noticed, the typical grain size being ~ 30 nm. The origin of the compressive stress source in the metastable Mo0.84Si0.16 alloy grown on (110) Mo is discussed based on the stress evolutions measured at varying deposition rates and Ar working pressures, as well as in comparison with stress evolutions in pure Mo films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 5, 30 December 2010, Pages 1655–1661
نویسندگان
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