کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669798 1008889 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of horizontally grown silicon nanowires using a thin aluminum film as a catalyst
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Fabrication of horizontally grown silicon nanowires using a thin aluminum film as a catalyst
چکیده انگلیسی

We present a new method for the fabrication of horizontal silicon nanowires for application in nanoelectronic devices. A web of horizontally connected silicon nanowires is grown on a silicon substrate using a thin aluminum film as a catalyst. A thin layer of oxide is thermally grown on a silicon substrate. The oxide layer is then selectively etched using photolithography. A thin layer of aluminum is thermally evaporated on the substrate with the patterned oxide layer. When the sample is annealed above the eutectic temperature, we show that the silicon gets deposited along the grain boundaries of aluminum in the form of thin nanowires. We show that this phenomenon is due to the high solubility of silicon in aluminum at high temperatures.The surface morphology was analyzed using Scanning Electron Microscopy (SEM). The compositional analysis was done using Energy Dispersive X-ray spectroscopy (EDX).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 5, 30 December 2010, Pages 1681–1686
نویسندگان
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