کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669840 | 1008890 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass](/preview/png/1669840.png)
چکیده انگلیسی
Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 10, 31 March 2009, Pages 3138–3142
Journal: Thin Solid Films - Volume 517, Issue 10, 31 March 2009, Pages 3138–3142
نویسندگان
Hisao Makino, Aki Miyake, Takahiro Yamada, Naoki Yamamoto, Tetsuya Yamamoto,