کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669860 | 1008891 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application](/preview/png/1669860.png)
چکیده انگلیسی
In this work, the advances in the resistance switching characteristics of stoichiometric ZrO2 thin films were studied. The Al/ZrO2/Al structure exhibits reliable and reproducible switching behaviours. The thickness dependence and electrode size effect was demonstrated and understood in terms of a combined model of conductive filament/carriers trapping. Analyses of current–voltage characteristics were performed and it is suggested that the resistive switching characteristics of the ZrO2 film are governed by both the electrode/interface effect and the formation of conductive multi-filaments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 20, 2 August 2010, Pages 5652–5655
Journal: Thin Solid Films - Volume 518, Issue 20, 2 August 2010, Pages 5652–5655
نویسندگان
P. Zhou, H. Shen, J. Li, L.Y. Chen, C. Gao, Y. Lin, T.A. Tang,