کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669873 | 1008891 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of 3C-SiC on Si(111) using the four-step non-cooling process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of 3C-SiC on Si(111) using the four-step non-cooling process Growth of 3C-SiC on Si(111) using the four-step non-cooling process](/preview/png/1669873.png)
چکیده انگلیسی
A modified four-step method was applied to grow a 3C-SiC thin film of high quality on the off-axis 1.5° Si(111) substrate in a mixed gas of C3H8, SiH4 and H2 using low pressure chemical vapor deposition. The modified four-step method adds a diffusion step after the carburization step and removes the cooling from the traditional three-step method (clean, carburization, and growth). The X-ray intensity of the 3C-SiC(111) peak is enhanced from 5 Ã 104 counts/s (the modified three steps) to 1.1 Ã 105 counts/s (the modified four steps). The better crystal quality of 3C-SiC is confirmed by the X-ray rocking curves of 3C-SiC(111). 3C-SiC is epitaxially grown on Si(111) supported by the selected area electron diffraction patterns taken at the 3C-SiC/Si(111) interface. Some {111} stacking faults and twins appear inside the 3C-SiC, which may result from the stress induced in the 3C-SiC thin film due to lattice mismatch. The diffusion step plays roles in enhancing the formation of Si-C bonds and in reducing the void density at the 3C-SiC/Si(111) interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 20, 2 August 2010, Pages 5700-5703
Journal: Thin Solid Films - Volume 518, Issue 20, 2 August 2010, Pages 5700-5703
نویسندگان
Jui-Min Liu, Wei-Yu Chen, J. Hwang, C.-F. Huang, Wei-Lin Wang, Li Chang,