کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669928 1008892 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures
چکیده انگلیسی

A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 6, 1 January 2010, Pages 1747–1750
نویسندگان
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