کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670033 | 1008894 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of nitrogen-doped TiO2 thin films prepared by reactive pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nitrogen-doped titanium dioxide (TiO2) thin films were grown on (001) SiO2 substrates by reactive pulsed laser deposition. A KrF* excimer laser source (λ = 248 nm, ÏFWHM â
 10 ns, ν = 10 Hz) was used for the irradiations of pressed powder targets composed by both anatase and rutile phase TiO2. The experiments were performed in a controlled reactive atmosphere consisting of oxygen or mixtures of oxygen and nitrogen gases. The obtained thin film crystal structure was investigated by X-ray diffraction, while their chemical composition as well as chemical bonding states between the elements were studied by X-ray photoelectron spectroscopy. An interrelation was found between nitrogen concentration, crystalline structure, bonding states between the elements, and the formation of titanium oxinitride compounds. Moreover, as a result of the nitrogen incorporation in the films a continuous red-shift of the optical absorption edge accompanied by absorption in the visible spectral range between 400 and 500 nm wavelength was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 4, 1 December 2010, Pages 1464-1469
Journal: Thin Solid Films - Volume 519, Issue 4, 1 December 2010, Pages 1464-1469
نویسندگان
G. Sauthier, F.J. Ferrer, A. Figueras, E. György,