کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670048 | 1008895 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Multiple dip deposition of CdS films prepared by oscillating chemical bath
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Highly oriented CdS thin films with thicknesses greater than 1 μm were deposited using the oscillating chemical bath deposition technique with multiple dips at 75 °C, and from 15 to 75 min as deposition times. Samples with different thicknesses were deposited by repeating the chemical deposition process one, two and three times. All CdS films present the α-greenockite hexagonal structure with (002) as the preferential orientation. Band-gap energy values ranged from 2.35 to 2.42 eV, being the smaller value for the two dip processes. Energy dispersion spectroscopy measurements show good stoichiometry of the CdS films with 4.3 at.% as the maximum Cd variation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 19, 30 July 2010, Pages 5387–5390
Journal: Thin Solid Films - Volume 518, Issue 19, 30 July 2010, Pages 5387–5390
نویسندگان
C.D. Gutiérrez-Lazos, E. Rosendo, A.I. Oliva, M. Ortega, P. Bartolo-Pérez, H. Juárez, T. Díaz, G. García, M. Rubín,