کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670077 | 1008895 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p–n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p–n homojunction diode was obtained. It exhibits a distinct current–voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 19, 30 July 2010, Pages 5542–5545
Journal: Thin Solid Films - Volume 518, Issue 19, 30 July 2010, Pages 5542–5545
نویسندگان
Tieying Yang, Xiubo Qin, Huan-hua Wang, Quanjie Jia, Runsheng Yu, Baoyi Wang, Jiaou Wang, Kurash Ibrahim, Xiaoming Jiang, Qing He,