کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670077 1008895 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
چکیده انگلیسی

The direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p–n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p–n homojunction diode was obtained. It exhibits a distinct current–voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 19, 30 July 2010, Pages 5542–5545
نویسندگان
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