Growth and characterization of sputtered LaNiO3 films obtained with (La2NiO4 + Ni) cermet targets

LaNiO3 films were prepared by magnetron sputtering at 100–400 °C and 50–100 W with two (La2NiO4 + Ni) cermet targets; one had the La/Ni molar ratio of 1:1 and the other 1:1.355. The as-grown films were post-annealed at 700 °C for 20 min. Different film compositions and properties were obtained from the different process parameters including target composition, deposition temperature, and r.f. plasma power. The variations of crystallization, microstructure, and electrical resistivity with process parameters were explained by film composition. The Ni-deficient films had a tendency to form other La-rich second phases embedded in a nonstoichiometric LaNiO3 matrix. Our post-annealed LaNiO3 films obtained from target B had low resistivity of 0.34 × 10− 3 Ω cm.