کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670239 | 1008897 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress](/preview/png/1670239.png)
چکیده انگلیسی
This study theoretically examines the hole subband structures in inversion layers of strained Silicon (Si) transistors under different strain conditions. Two strain conditions of Si P-channel metal-oxide-semiconductor (PMOS), including intrinsic strain resulting from growing the Si on the (001) Silicon-Germanium (SiGe) substrate and mechanical stress applied externally, were considered in this work. Various effective masses of hole inversion layers used in technology computer-aided design (TCAD) simulations were investigated, such as the quantization effective mass, mz, the density of states effective mass, mDOS, and the conductivity mass, mÏ. It was then demonstrated that the external stress applied parallel to the channel direction for holes in the inversion layer with intrinsic biaxial strain is an optimal method of lowering mÏ and increasing mDOS for the top subband.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 6, Supplement 1, 1 January 2010, Pages S154-S158
Journal: Thin Solid Films - Volume 518, Issue 6, Supplement 1, 1 January 2010, Pages S154-S158
نویسندگان
Shu-Tong Chang, Jacky Huang, Ming Tang, Chung-Yi Lin,