کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670247 1008897 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of double-dot single-electron transistor in silicon nanowire
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Fabrication of double-dot single-electron transistor in silicon nanowire
چکیده انگلیسی

We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 6, Supplement 1, 1 January 2010, Pages S186–S189
نویسندگان
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