کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670292 1008898 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films
چکیده انگلیسی

Porous ultra low-k (ULK) dielectrics are used to reduce resistance–capacitance delay for advanced complementary metal oxide semiconductor interconnects. Since the porosity leads to an increased sensitivity of the material to plasma processes (etching and post-etching plasmas), dedicated characterization techniques are needed to assess the ULK properties during its integration. This study shows that ellipsometric porosimetry, employed with an appropriate multi-solvent protocol, can be effectively used to characterize different plasma-treated porous SiOCH (p-SiOCH) films in terms of porosity, pore sealing and hydrophobicity. It was found that after exposure to fluorocarbon, NH3, H2, CH4 or O2 based plasmas the p-SiOCH surface is modified leading to moisture uptake. According to the plasma, the solvent adsorption is also modified due to a densification of the surface. In that case solvent adsorption measurements were performed in a kinetic mode to quantify the plasma-sealing effect.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 18, 1 July 2010, Pages 5140–5145
نویسندگان
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