کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670547 1008901 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence of strained Si1 − x − yGexCy epilayers on Si(100)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Photoluminescence of strained Si1 − x − yGexCy epilayers on Si(100)
چکیده انگلیسی

Photoluminescence (PL) spectroscopy has been used to study the incorporation of C in several samples consisting of strained Si1 − x − yGexCy epilayers lattice matched to Si (001). To obtain the total C concentration, these samples were characterized by both SIMS and Auger emission spectroscopy, and X-ray diffraction data was analyzed to obtain the substitutional C concentration. The difference of the total and substitutional C concentrations, i.e., the non-substitutional carbon fraction, was found to be directly correlated with specific spectral lines in both the room-temperature Raman and low-temperature PL spectra.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 128–131
نویسندگان
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