کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670593 | 1008901 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of anisotropic relaxation rate of SGOI (110) substrates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of anisotropic relaxation rate of SGOI (110) substrates Characterization of anisotropic relaxation rate of SGOI (110) substrates](/preview/png/1670593.png)
چکیده انگلیسی
In this report, both normal and lateral lattice parameters of partially-relaxed (110) surface Silicon–Germanium-on-Insulator (SGOI) layers are precisely determined by using asymmetric reflection XRD measurements. Moreover, relaxation rates of these SiGe layers are evaluated by using the values obtained from the XRD measurements. It is found, as a result, that anisotropic lattice relaxation between [− 110] and [001] directions occurs in the (110) SGOI layers and that it is much harder to relax the lattices along [− 110] direction than along [001] direction. This anisotropic lattice relaxation is attributable to the generation of twins on (111) glide planes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 285–288
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 285–288
نویسندگان
Yoshihiko Moriyama, Norio Hirashita, Naoharu Sugiyama, Shin-ichi Takagi,