کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670604 | 1008901 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of bonding structures of directly bonded hybrid crystal orientation substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of bonding structures of directly bonded hybrid crystal orientation substrates Characterization of bonding structures of directly bonded hybrid crystal orientation substrates](/preview/png/1670604.png)
چکیده انگلیسی
Directly bonded Si(011)/Si(001) substrates were prepared by conventional bonding and grind back methods. The bonding interface structure and crystallinity in the bonded substrate were studied by transmission electron microscopy and X-ray diffraction (XRD). The regular array of dislocations and the undulation were formed in the interface. From XRD analysis, it was confirmed that the crystallinity of the Si(011) layer in the bonded substrate deteriorated in comparison with the bulk Si(011) wafer. We proposed that directly bonded Si substrates with different crystal orientations induced stress at the bonding interface due to misfit bonding, as a result, the Si(011) layer was strained and the undulation was formed at the bonding interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 323–326
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 323–326
نویسندگان
E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, S. Zaima,