Properties of LiNbO3 based heterostructures grown by pulsed-laser deposition for optical waveguiding application

Epitaxial LiNbO3 (LN) thin films have been grown onto (00.1) Al2O3 substrates and onto sapphire covered with a conductive ZnO buffer layer. For the two systems, the LN thin films are well crystallised and highly (00.1) oriented. Epitaxial relationships between the different layers are evidenced both on the LN/sapphire film and the LN/ZnO/sapphire heterostructure. The optical waveguiding propagation losses of the LN/sapphire films are very low (1 ± 0.5 dB/cm) while the LN/ZnO/sapphire heterostructure does not exhibit satisfying waveguiding properties mainly due to the high conductivity (600 S m− 1) of the ZnO buffer layer.