کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670662 | 1008902 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope](/preview/png/1670662.png)
چکیده انگلیسی
We studied in situ the initial stages of atomic layer deposition (ALD) of HfO2 by an ultra high vacuum atomic force microscope working in frequency-modulation mode. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf and water as precursors, were performed on the Si(001)/SiO2 substrate maintained at 230 °C. After each ALD cycle we studied the influence of the HfO2 growth on the surface height histogram, the root mean square roughness, the surface fractal dimension and the autocorrelation function. This detailed analysis of the surface topography allowed us to confirm the completion of the first HfO2 layer after four ALD cycles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 16, 1 June 2010, Pages 4688–4691
Journal: Thin Solid Films - Volume 518, Issue 16, 1 June 2010, Pages 4688–4691
نویسندگان
Krzysztof Kolanek, Massimo Tallarida, Konstantin Karavaev, Dieter Schmeisser,