The photoluminescence of SiCN thin films prepared by C+ implantation into α-SiNx:H

SiCN thin films were prepared by high-dosage (2 × 1017 cm− 2) C+ ion implantation into α-SiNx:H films. The prepared films were then processed by thermal annealing for 2 h at 800 °C, 1000 °C and 1200 °C respectively. The composition and bond structure of SiCN were analyzed by X-ray photoemission spectroscopy, Auger electron spectroscopy, Raman spectroscopy and X-ray diffraction, and photoluminescence. Ternary structure with N bridging C and Si of the film annealed at 800 °C was found. The luminescent properties of SiCN have also been studied by synchrotron radiation at 20 K. Four emission bands were observed, corresponding to 2.95, 2.58, 2.29 and 2.12 eV at 20 K, respectively. In this paper, we report the experimental results and try to explain them.