کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670945 1008907 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods
چکیده انگلیسی

As-doped sub-micron ZnO rods were realized by a simple thermal diffusion process using a GaAs wafer as an arsenic resource. The surface of the sub-micron ZnO rods became rough and the morphology of As-doped sub-micron ZnO rods changed markedly with increasing diffusion temperature. From the results of energy-dispersive X-ray spectroscopy, X-ray diffraction and photoluminescence, arsenic elements were confirmed to be introduced into the sub-micron ZnO rods. The acceptor ionization energy was deduced to be about 110 meV based on the temperature-dependent PL spectra.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 15, 31 May 2010, Pages 4390–4393
نویسندگان
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