کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670946 | 1008907 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Distributed Bragg reflector enhancement of electroluminescence from a silicon nanocrystal light emitting device
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We demonstrate distributed Bragg reflector (DBR) enhanced electroluminescence from a silicon nanocrystal-based light emitting device. An a-Si/SiO2 superlattice containing silicon nanocrystals serves as the intrinsic layer in an n–i–n device that is embedded in a DBR cavity consisting of alternating layers of silicon and silicon dioxide. The entire structure, including DBR, superlattice and contact layers, is deposited by plasma-enhanced chemical vapor deposition. The photoluminescence, electroluminescence (EL) and optical output power are measured and compared to a reference device. The DBR is found to enhance the peak EL intensity by a factor of 25 and the external quantum and power conversion efficiencies by a factor of 2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 15, 31 May 2010, Pages 4394–4398
Journal: Thin Solid Films - Volume 518, Issue 15, 31 May 2010, Pages 4394–4398
نویسندگان
Tim Creazzo, Brandon Redding, Elton Marchena, Ruiying Hao, Janusz Murakowski, Shouyuan Shi, Dennis W. Prather,