Studies on In-pWSe2 Schottky diode by current–voltage–temperature method

Two types of In-pWSe2 Schottky barrier diodes were fabricated, one on as grown (uncleaved) and the other on cleaved WSe2 surface. Current–voltage characteristics of these diodes have been analyzed over a wide span of temperature ranging from 140 K to 300 K on the basis of thermionic emission theory with Gaussian distribution model of barrier height. Below 200 K, a model has been considered where the total current is assumed to be the sum of thermionic emission, generation recombination and tunneling components. The observed deviation in barrier height, ideality factor and Richardson plot below 200 K are interpreted in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes.