کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670962 1008907 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Activation behavior of boron implanted poly-Si on glass substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Activation behavior of boron implanted poly-Si on glass substrate
چکیده انگلیسی

The activation behavior of boron (B) implanted poly-Si films on glass substrates has been investigated. The effect of B dose and annealing temperature on crystal defects and electrical properties of the films were evaluated by Raman spectroscopy and Hall measurement. It was found that the maximum activation ratio of the film with B dose of 1 × 1015 cm− 2 was obtained when Raman peak associated with disordered amorphous silicon disappeared. However, reverse anneal was observed in the film when the annealing temperature further increased. The results from secondary ion mass spectrometry and Hall measurement revealed that B segregation at the top and bottom interface and deactivation of B substitutional occurred simultaneously in the high-dose specimens when the annealing temperature increased from 600 to 750 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 15, 31 May 2010, Pages 4477–4481
نویسندگان
, , , , , ,