کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670985 | 1008908 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bismuth Hall probes: Preparation, properties and application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Bismuth Hall probes with an active area in the µm2 and sub-µm2 (down to (100 × 100) nm2) range have been fabricated on SiO2/Si substrates. The structural and electrical properties of Bi films with a thickness of 20–90 nm were investigated. Critical values of the structural characteristics, at which the film resistivity dependences undergo a distinct change were found. The transition to low resistivity, good crystallinity and high degree of texturing were observed at a film thickness of 65 nm. The potential use of the Bi Hall sensor as a swell sensor for monitoring the swelling of stimuli-sensitive hydrogels was demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 17, 30 June 2010, Pages 4847–4851
Journal: Thin Solid Films - Volume 518, Issue 17, 30 June 2010, Pages 4847–4851
نویسندگان
R. Koseva, I. Mönch, J. Schumann, K.-F. Arndt, O.G. Schmidt,