کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671034 | 1008909 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrochromic properties of InN:Sn films deposited by reactive evaporation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrochromic properties of InN:Sn films deposited by reactive evaporation Electrochromic properties of InN:Sn films deposited by reactive evaporation](/preview/png/1671034.png)
چکیده انگلیسی
Indium–tin nitride (InN:Sn) films were deposited by vacuum evaporation assisted by active nitrogen irradiation. A glancing-angle deposition scheme was applied to form isolated nanocolumnar structures in order to expand surface area of the films. X-ray diffraction analysis revealed that the films consisted of crystallites of InN:Sn in a wurtzite structure and amorphous InN:Sn matrix. The doped tin atoms did not work as donor in the InN:Sn films but electrons-trapping sites. The electrochromic amplitude was reduced with increase in tin composition. Despite that the tin doping caused the decrease in carrier density, the color-change region of the InN:Sn films shifted slightly toward shorter wavelength.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 3, 1 December 2009, Pages 1001–1005
Journal: Thin Solid Films - Volume 518, Issue 3, 1 December 2009, Pages 1001–1005
نویسندگان
Y. Inoue, H. Takeuchi, H. Ishikawa, O. Takai,