کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671052 | 1008910 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of Zn1 − xMgxO transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transparent conducting thin films of Al-doped and Ga-doped Zn1 − xMgxO with arbitrary Mg content x were deposited on glass substrates by simultaneous RF-magnetron sputtering of doped ZnO and MgO targets, and their fundamental properties were characterized. MgO phase separation in Zn1 − xMgxO films was not detected by X-ray diffraction. The Zn1 − xMgxO films show high optical transparency in the visible region. Although the carrier density of the Zn1 − xMgxO films decreased with increasing x, the Zn1 − xMgxO films showed good electrical conductivity; electrical resistivity as low as 8 × 10− 4 Ω ·cm was achieved for the Zn0.9Mg0.1O:Ga thin film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 2949–2952
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 2949–2952
نویسندگان
K. Maejima, H. Shibata, H. Tampo, K. Matsubara, S. Niki,