Substrate engineering of LaAlO3 for non-polar ZnO growth

We demonstrate that growth of non-polar ZnO in a-plane and m-plane can be achieved through substrate engineering of LaAlO3 with (001) and (112) surface. X-ray diffraction, reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal that a-plane ZnO on LaAlO3 (001) consists of two types of domains perpendicular to each other with in-plane orientation relationships of [0001]ZnO // [11̅0]LAO and [11̅00]ZnO // [11̅0]LAO. Single domain epitaxy of m-plane ZnO on LaAlO3 (112) can be obtained with in-plane orientation relationships of (101̅0)ZnO//(112)LAO, [0001]ZnO // [1̅10]LAO and [12̅10]ZnO // [1̅1̅1]LAO.