کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671086 1008910 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films
چکیده انگلیسی

Excess oxygen and 1-at% Mg co-doped CuScO2[3R](0001) epitaxial films were prepared on a-plane sapphire substrates by combining two-step deposition and post-annealing techniques. The optical and electrical transport properties of the co-doped epitaxial films were compared with those of the CuScO2[3R](0001) epitaxial films. No significant increase in optical absorption was observed in the co-doped epitaxial films, and the energy gap for direct allowed transition was estimated at 3.7 eV. The carrier concentration of CuScO2[3R](0001) epitaxial films was controlled from ~ 1016 cm- 3 to ~ 1018 cm- 3 at room temperature by adjusting the excess oxygen and Mg co-doping. The electrical conductivity, carrier concentration, and Hall mobility of the most conductive film were 3.6 × 10- 2 Scm- 1, 8.5 × 1017 cm- 3 and 2.6 × 10- 1 cm2V- 1 s- 1 at room temperature, respectively. The temperature dependence of the electrical transport properties of the film exhibited semiconducting characteristics, and the activation energy estimated from the temperature dependence of the carrier concentration was 0.50 eV.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 3097–3100
نویسندگان
, , , , ,