Transparent conducting Nb-doped anatase TiO2 (TNO) thin films sputtered from various oxide targets

Transparent conducting Nb-doped anatase TiO2 (TNO) epitaxial films were sputtered from TiO2-, Ti2O3-, and Ti-based targets at various oxygen partial pressures (Po2). Using the TiO2- and Ti2O3-based targets, highly conductive films showing a resistivity (ρ) of ~ 3 × 10− 4 Ω cm could be formed without postdeposition treatment. In the case of the TNO films formed from the Ti-based target, reductive annealing had to be carried out at a temperature of 600 °C to achieve similar resistivity values. Thus, the use of oxide targets is preferable to obtain as-grown transparent conducting TNO films. In particular, the Ti2O3-based target is practically advantageous, because it offers a wide range of optimal Po2 values at which ρ values of the order of 10− 4 Ω cm are achievable.