کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671146 1008912 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deposition and characterization of highly p-type antimony doped ZnTe thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Deposition and characterization of highly p-type antimony doped ZnTe thin films
چکیده انگلیسی
We report deposition of highly p-type antimony doped ZnTe films onto glass substrates using ZnTe and Sb effusion cells in ultra-high-vacuum environment of an MBE system. It was found that the widely-used conventional co-evaporation technique does not produce highly p-type films. Through a series of deposition experiments, a 4-step method consisting deposition of the layers followed by a post annealing process was developed. The maximum carrier concentration was 3 × 1019 cm−3 which is the highest reported for ZnTe:Sb films. The surface morphology and the structure of the films were analyzed using AFM and XRD. Electrical properties of Sb doped films were investigated by four-point probe and room temperature Hall effect measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2149-2152
نویسندگان
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