کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671151 | 1008912 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of flash evaporated CuIn1 â xGaxTe2 (x = 0, 0.5 and 1) thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Study of flash evaporated CuIn1 â xGaxTe2 (x = 0, 0.5 and 1) thin films Study of flash evaporated CuIn1 â xGaxTe2 (x = 0, 0.5 and 1) thin films](/preview/png/1671151.png)
چکیده انگلیسی
CuIn1 â xGaxTe2 thin films with x = 0, 0.5 and 1, have been prepared by flash evaporation technique. These semiconducting layers present a chalcopyrite structure. The optical measurements have been carried out in the wavelength range 200-3000 nm. The linear dependence of the lattice parameters as a function of Ga content obeying Vegard's law was observed. The films have high absorption coefficients (4 · 104 cmâ 1) and optical band gaps ranging from 1.06 eV for CuInTe2 to 1.21 eV for CuGaTe2. The fundamental transition energies of the CuIn1 â xGaxTe2 thin films can be fitted by a parabolic equation namely Eg1(x) = 1.06 + 0.237x â 0.082x2. The second transition energies of the CuInTe2 and CuGaTe2 films were estimated to be: Eg2 = 1.21 eV and Eg2 = 1.39 eV respectively. This variation of the energy gap with x has allowed the achievement of absorber layers with large gaps.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2171-2174
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2171-2174
نویسندگان
O. Aissaoui, L. Bechiri, S. Mehdaoui, N. Benslim, M. Benabdeslem, X. Portier, H. Lei, J.L. Doualan, G. Nouet, A. Otmani,