کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671168 1008912 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Origin of defects in CuIn1 − xGaxSe2 solar cells with varied Ga content
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Origin of defects in CuIn1 − xGaxSe2 solar cells with varied Ga content
چکیده انگلیسی

A series of CuIn1 − xGaxSe2 solar cells with varied Ga content (0 ≤ x ≤ 1) was prepared using a three-stage co-evaporation process. The grain sizes of these devices vary with gallium content, exhibiting a maximum for approximately x = 0.2, which does not coincide with the maximum of the solar conversion efficiency observed between 0.34 < x < 0.37 for these devices.Admittance spectroscopy and drive-level capacitance profiling measurements were performed yielding a defect level with an activation energy of Ea = 0.1 eV which is independent of the amount of Ga and the grain size respectively. This defect closely resembles the N1 defect level reported in the literature. Only for relatively high Ga contents (x > 0.7) an additional defect appears. An equivalent circuit model describing a parallel connection of bulk and grain boundary capacitors allows us to conclude that the detected shallow defect is not predominantly located at the grain boundaries.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 7, 2 February 2009, Pages 2244–2247
نویسندگان
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